Metallized semiconductor aluminum technology
Keywords: semiconductor aluminum technology
Hot press bonding is a key technology for wafer production in sealed chambers and is essential for many microelectromechanical systems (MEMS) functions. Aluminum has many advantages over other defined materials: low cost, high thermal and electrical conductivity, and high electrical resistance.
Due to its characteristics, aluminum and its alloys are widely used for wiring in microchips: excellent adhesion to BPSG or PSG on SiO2 and interlayer, good wire bonding (ie, gold wire and aluminum wire), low resistance (3μΩ·cm) ), the structure in the dry etching process is simple, aluminum only meets the electrical toughness and corrosion resistance requirements. Metals such as silver or copper have better properties, but these metals are more expensive and are not easily etched in dry etching.
The use of pure aluminum causes the silicon to diffuse into the metal, and the semiconductor and metallization reaction is only at 200-250 °C. The diffusion of silicon causes a cavity at the interface of the two materials and is then filled with aluminum. Therefore, if they pass through the doped region into the underlying silicon crystal, a short circuit is caused. Wai.
The size of these spikes depends on the temperature at which the aluminum is deposited on the wafer. In order to avoid spikes, there are several possibilities. Deep ion implantation-contact injection can be introduced at the location of the via. Therefore the spike does not reach the substrate.
To get more information on technology, technology, and equipment, please click on the right - line customer service. Or leave a message to us. It is our pleasure to relieve the trouble for you!
We are welcome to visit our factory at any time.
